The Electrical properties of Sintered Compacts of BiSnSe2
(2009). The Electrical properties of Sintered Compacts of BiSnSe2. EKB Journal Management System, 32(2), 177-196. doi: 10.21608/ejs.2009.148848
. "The Electrical properties of Sintered Compacts of BiSnSe2". EKB Journal Management System, 32, 2, 2009, 177-196. doi: 10.21608/ejs.2009.148848
(2009). 'The Electrical properties of Sintered Compacts of BiSnSe2', EKB Journal Management System, 32(2), pp. 177-196. doi: 10.21608/ejs.2009.148848
The Electrical properties of Sintered Compacts of BiSnSe2. EKB Journal Management System, 2009; 32(2): 177-196. doi: 10.21608/ejs.2009.148848

The Electrical properties of Sintered Compacts of BiSnSe2

Egyptian Journal of Solids
Article 7, Volume 32, Issue 2, 2009, Page 177-196  XML PDF (259.8 K)
DOI: 10.21608/ejs.2009.148848
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Abstract
The prepared samples of BiSnSe2 using cold pressing technique showed
semimetallic and semconductor behavior depending on the conditions of
sintering. Among the semoconducting behavior, the resistivity is weakly
dependent on the ambient temperature which is owed to the hopping mechanism
to conduction. Also, the behavior of the electrical properties with the applied
electric field and the ambient temperature have been detected and interpritted
as due to intergrain and intragrain coupling.
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