Transport Properties of Ga0.45In0.55Sb | ||
| Egyptian Journal of Solids | ||
| Article 4, Volume 30, Issue 1, December 2007, Pages 31-46 PDF (1.55 M) | ||
| Document Type: Original Article | ||
| DOI: 10.21608/ejs.2007.149056 | ||
| Abstract | ||
| The thermoelectric power and Hall measurement carried out on the asprepared sample of Ga0.45 In0.55 Sb confirmed that the sample is n-type semiconductor. The existence of two minima at 3.5 and 4.8 Vcm-1 on the σ - E characteristic reflects the occurrence of the Gunn effect. A metallic like behavior of the sample is observed and interpreted. The effect of the magnetic field on the concentration of the electrons is apparent | ||
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