The Dependence of Silicon Reactivity on the Constituents of the Etchant Electrolyte and the Effect of Some Postetch Treatments on the Photoluminescence Properties of Porous Silicon | ||||
| Egyptian Journal of Solids | ||||
| Article 7, Volume 26, Issue 1, 2003, Page 67-82 PDF (404.14 K) | ||||
| DOI: 10.21608/ejs.2003.150017 | ||||
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| Abstract | ||||
| The cyclic voltammetry (C.V.) technique was used to study the electrode process of silicon in different etchant electrolytes. Also, similar anodizing solutions to the electrolytes used in the C.V. were used for fabricating porous silicon (PS) samples in the electrochemical cell and the effect of some postetch treatments on the photoluminescence (PL) properties of these PS samples were tested. The j-v relation showed that, up to ≈ 50% water in the etchant electrolyte, the critical current peak height in HF:HCl:C2H5OH: H2O electrolyte is higher than the critical current peak height in HF:(CH3)2CO:H2O electrolyte, which is higher than the peak in HF:C2H5OH:H2O electrolyte. Also, the j-v relation in case of concentrated electrolytes (≈0.4 % water) was not the standard one for PS formation. These results were reflected in the PL properties of the fabricated PS samples. Water in the presence of HF had a magnified influence in the PL intensity of PS samples fabricated via anodization in concentrated electrolyte. A mechanism for Si dissolution in HF-acetone was proposed. The results were explained in terms of the model which attributes the PL to surface confined molecular emitters. | ||||
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