Space-Charge–Limited Currents in Evaporated GaS Thin Films | ||||
| Egyptian Journal of Solids | ||||
| Article 11, Volume 24, Issue 2, 2001, Page 235-244 PDF (97.67 K) | ||||
| DOI: 10.21608/ejs.2001.151448 | ||||
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| Abstract | ||||
| Space-charge–limited–current (SCLC) measurements have been performed at room temperature on n-GaS thin films. Ohmic conduction was predominant at low applied fields, with the free electron concentration no ≈ 3.25×10 14 m –3. Two deep electron traps have been found at 0.51 and 0.56 eV below the conduction band with concentrations ranging between 10 21 and 10 22 m-3. Two distinct activation energies ΔE1 and ΔE2 have been detected in the temperature range between 250 K and 400 K. The former represents a shallow level with ΔE1 = 0.32 eV. The latter one, ΔE2 = 0.63 eV, shows a deeper level located in the band gap. A comparison was made between the results of this work and data quoted by various authors with different techniques. The expected chemical defects are considered in data analysis. | ||||
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