Carrier Transport Mechanisms of a-GaAs/ n-Si Heterojunctions
(2001). Carrier Transport Mechanisms of a-GaAs/ n-Si Heterojunctions. EKB Journal Management System, 24(2), 245-254. doi: 10.21608/ejs.2001.151449
. "Carrier Transport Mechanisms of a-GaAs/ n-Si Heterojunctions". EKB Journal Management System, 24, 2, 2001, 245-254. doi: 10.21608/ejs.2001.151449
(2001). 'Carrier Transport Mechanisms of a-GaAs/ n-Si Heterojunctions', EKB Journal Management System, 24(2), pp. 245-254. doi: 10.21608/ejs.2001.151449
Carrier Transport Mechanisms of a-GaAs/ n-Si Heterojunctions. EKB Journal Management System, 2001; 24(2): 245-254. doi: 10.21608/ejs.2001.151449

Carrier Transport Mechanisms of a-GaAs/ n-Si Heterojunctions

Egyptian Journal of Solids
Article 12, Volume 24, Issue 2, 2001, Page 245-254  XML PDF (128.79 K)
DOI: 10.21608/ejs.2001.151449
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Abstract
Heterojunctions have been fabricated of p-type amorphous gallium
arsenide (a-GaAs) thin films onto n-type silicon (n-Si) single crystals using
thermal evaporation method. Current density-voltage and capacitance–voltage
measurements have been performed to determine the electrical properties of
the structures. Rectifying current involves tunneling and is explained by a
multi-tunneling capture-emission model. The reverse current is limited by the
carrier generation process. The capacitance-voltage behavior indicates an
abrupt interface with a main-band discontinuity of 0.25 eV occurs in the
valance band.
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