Effect of The Precursors and Synthesis Methods on The Optical and Photo- electrochemical Characteristics of SnS Absorber Layer | ||
| Egyptian Journal of Chemistry | ||
| Article 14, Volume 62, Issue 5, May 2019, Pages 955-964 PDF (2.4 M) | ||
| Document Type: Original Article | ||
| DOI: 10.21608/ejchem.2018.5122.1486 | ||
| Authors | ||
| Atef Y Shenouda* 1; Mustafa Mohamed Sanad1; Ofeliya Kostadinova2 | ||
| 1Central Metallurgical Research and Development Institute | ||
| 2Institute of Electrochemistry and Energy Systems (IEES), Bulgarian Academy of Sciences, 10 Acad. G. Bonchev Bl. 10, 1113 Sofia, Bulgaria | ||
| Abstract | ||
| Influence of the preparation method and different precursors are important for the absorber photovoltaic layer parameters of SnS. Synthesis of SnS compounds was carried out via two preparation methods; solid state reaction and hydrothermal; using different sulfur precursors. The morphology of particles and phase identification were studied using Field Emission Scanning Electron Microscope (FESEM) and X-ray diffraction (XRD) techniques. The XRD diffraction pattern of SnS revealed the existence of two crystal structure phases: the major is orthorhombic and the minor phase is tetragonal. The optical properties were determined using UV-Vis spectrophotometer showing absorbance peaks around 485 nm. The lowest bandgap of 1.74 eV is for SnS sample prepared from L-cystine. Electrochemical impedance spectroscopy (EIS) revealed that SnS cell prepared from L-cystine gave the lowest resistance of 171W. The photoelectrochemical measurements of this cell showed the highest power conversion efficiency per unit area of 2.5%. | ||
| Keywords | ||
| SnS absorber layer; Electrochemical impedance spectroscopy; photoelectrochemical investigation | ||
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