Effect of The Precursors and Synthesis Methods on The Optical and Photo- electrochemical Characteristics of SnS Absorber Layer | ||||
Egyptian Journal of Chemistry | ||||
Article 14, Volume 62, Issue 5, May 2019, Page 955-964 PDF (2.4 MB) | ||||
Document Type: Original Article | ||||
DOI: 10.21608/ejchem.2018.5122.1486 | ||||
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Authors | ||||
Atef Y Shenouda ![]() ![]() ![]() | ||||
1Central Metallurgical Research and Development Institute | ||||
2Institute of Electrochemistry and Energy Systems (IEES), Bulgarian Academy of Sciences, 10 Acad. G. Bonchev Bl. 10, 1113 Sofia, Bulgaria | ||||
Abstract | ||||
Influence of the preparation method and different precursors are important for the absorber photovoltaic layer parameters of SnS. Synthesis of SnS compounds was carried out via two preparation methods; solid state reaction and hydrothermal; using different sulfur precursors. The morphology of particles and phase identification were studied using Field Emission Scanning Electron Microscope (FESEM) and X-ray diffraction (XRD) techniques. The XRD diffraction pattern of SnS revealed the existence of two crystal structure phases: the major is orthorhombic and the minor phase is tetragonal. The optical properties were determined using UV-Vis spectrophotometer showing absorbance peaks around 485 nm. The lowest bandgap of 1.74 eV is for SnS sample prepared from L-cystine. Electrochemical impedance spectroscopy (EIS) revealed that SnS cell prepared from L-cystine gave the lowest resistance of 171W. The photoelectrochemical measurements of this cell showed the highest power conversion efficiency per unit area of 2.5%. | ||||
Keywords | ||||
SnS absorber layer; Electrochemical impedance spectroscopy; photoelectrochemical investigation | ||||
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