Fabrication, electrical investigation, and photovoltaic investigations of Au/In2Se3/p-Si/Al diode using thermal evaporation approach
Ebraheem, B., Farrag, A., ElNahass, M., Roushdy, N. (2023). Fabrication, electrical investigation, and photovoltaic investigations of Au/In2Se3/p-Si/Al diode using thermal evaporation approach. EKB Journal Management System, 5(1), -. doi: 10.21608/fsrt.2022.178065.1077
Bassant Ebraheem; A.A.M. Farrag; M.M. ElNahass; N. Roushdy. "Fabrication, electrical investigation, and photovoltaic investigations of Au/In2Se3/p-Si/Al diode using thermal evaporation approach". EKB Journal Management System, 5, 1, 2023, -. doi: 10.21608/fsrt.2022.178065.1077
Ebraheem, B., Farrag, A., ElNahass, M., Roushdy, N. (2023). 'Fabrication, electrical investigation, and photovoltaic investigations of Au/In2Se3/p-Si/Al diode using thermal evaporation approach', EKB Journal Management System, 5(1), pp. -. doi: 10.21608/fsrt.2022.178065.1077
Ebraheem, B., Farrag, A., ElNahass, M., Roushdy, N. Fabrication, electrical investigation, and photovoltaic investigations of Au/In2Se3/p-Si/Al diode using thermal evaporation approach. EKB Journal Management System, 2023; 5(1): -. doi: 10.21608/fsrt.2022.178065.1077

Fabrication, electrical investigation, and photovoltaic investigations of Au/In2Se3/p-Si/Al diode using thermal evaporation approach

Frontiers in Scientific Research and Technology
Volume 5, Issue 1, March 2023  XML PDF (961.77 K)
Document Type: Original Article
DOI: 10.21608/fsrt.2022.178065.1077
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Authors
Bassant Ebraheem email orcid 1; A.A.M. Farrag1; M.M. ElNahass1; N. Roushdy2
1Thin-film Laboratory, Physics Department, Faculty of Education, Ain Shams University, Cairo, 11757, Egypt
2Electronic Materials Department, Advanced Technology and New Material Institute, City for Scientific Research and Technological Applications, New Borg El Arab City,21934, Alexandria, Egypt
Abstract
Fabrication, electrical investigation, and photovoltaic investigations of Au/In2Se3/p-Si/Al diode using thermal evaporation approach
The heterojunction of Au/In2Se3/p-type silicon (p-Si)/Al was manufactured in this study by the deposition of the In2Se3 layer on p-Si wafers using the thermal evaporation process. The heterojunction's dark current-voltage characteristics were measured throughout a temperature range of 308 to 398 K. The characteristics and conduction mechanisms of heterojunction diodes have been investigated. The major electrical properties of the examined device were extracted via current-voltage measurements. At the targeted temperature range, the space charge-limited conduction mechanism was investigated, and thorough information about the conduction mechanism was obtained. Current-voltage characteristics and power-law dependence were discovered to be dictated by space charge-limited currents and temperature dependence. The extracted series and shunt resistances decreased as the temperature rose, indicating that the device's properties improved as the temperature rose. The manufactured films' and junction diode's measured properties indicate that they can be used as photodetectors and photovoltaic applications.
Keywords
Current-voltage characteristics; Space Charge; Heterojunction; Conduction mechanism
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