EXTINCTION-BASED VARIABLE OPTICAL ATTENUATOR IN InGaAsP/InP | ||
| The International Conference on Mathematics and Engineering Physics | ||
| Article 12, Volume 3, International Conference on Engineering Mathematics and Physics (ICMEP-3), May 2006, Pages 1-10 PDF (595.6 K) | ||
| Document Type: Original Article | ||
| DOI: 10.21608/icmep.2006.29915 | ||
| Authors | ||
| ABDALLA S.1; NG S.2; MOKHTAR M. M.1; HASAN M. F.1 | ||
| 1Egyptian Armed Forces. | ||
| 2Department of Electronics, Carleton University, Canada. | ||
| Abstract | ||
| ABSTRACT An extinction-based compact InGaAsP/InP waveguide variable optical attenuator (VOA) with electrically modulated bend loss is demonstrated. Injection of carriers is utilized to modify the effective index of the waveguide bent section. The p-i-n semiconductor waveguide layer structure is discussed. Signal propagation at multiple bias conditions is simulated and the attenuator performance is calculated and compared to that of a straight waveguide attenuator. The device exhibits attenuation better than 15 dB for both TE and TM polarizations. 3-dB attenuation is achieved at an applied current of ~ 12 mA which is less than half the current required by a comparable straight waveguide attenuator. | ||
| Keywords | ||
| Bend loss attenuation; InGaAsP/InP; carrier injection; Variable optical attenuator | ||
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