Low power, Low Voltage and High Gain UWB Low-Noise Amplifier in the 0.13 μm CMOS technology
Sayed, A., Hamed, H., Hasaneen, E. (2010). Low power, Low Voltage and High Gain UWB Low-Noise Amplifier in the 0.13 μm CMOS technology. EKB Journal Management System, 7(7th International Conference on Electrical Engineering ICEENG 2010), 1-11. doi: 10.21608/iceeng.2010.33283
Alhassan. S. M. Sayed; Hesham F. A. Hamed; El-Sayed A.M. Hasaneen. "Low power, Low Voltage and High Gain UWB Low-Noise Amplifier in the 0.13 μm CMOS technology". EKB Journal Management System, 7, 7th International Conference on Electrical Engineering ICEENG 2010, 2010, 1-11. doi: 10.21608/iceeng.2010.33283
Sayed, A., Hamed, H., Hasaneen, E. (2010). 'Low power, Low Voltage and High Gain UWB Low-Noise Amplifier in the 0.13 μm CMOS technology', EKB Journal Management System, 7(7th International Conference on Electrical Engineering ICEENG 2010), pp. 1-11. doi: 10.21608/iceeng.2010.33283
Sayed, A., Hamed, H., Hasaneen, E. Low power, Low Voltage and High Gain UWB Low-Noise Amplifier in the 0.13 μm CMOS technology. EKB Journal Management System, 2010; 7(7th International Conference on Electrical Engineering ICEENG 2010): 1-11. doi: 10.21608/iceeng.2010.33283