Investigation of high mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by hydride vapor phase epitaxy (HVPE) | ||||
The International Conference on Electrical Engineering | ||||
Article 71, Volume 6, 6th International Conference on Electrical Engineering ICEENG 2008, May 2008, Page 1-9 PDF (167.84 K) | ||||
Document Type: Original Article | ||||
DOI: 10.21608/iceeng.2008.34311 | ||||
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Authors | ||||
Ashraf Uddin1; Rabah W. Aldhaheri1; Yi Qu2 | ||||
1Department of Electrical and Computer Engineering, King Abdulaziz University, PO Box 80204, Jeddah 21589, Saudi Arabia. | ||||
2National Key Laboratory on High Power Semiconductor Lasers Changchun University of Science and Technology No. 7083, Weixing Road, Changchun, P. R. China, 130022. | ||||
Abstract | ||||
Abstract: Two-inch-diameter sapphire (0001) substrates were used for the growth of AlGaN/GaN structure by hydride vapor phase epitaxy (HVPE). The two-dimensional electron gas (2DEG) structure consisted of a 2 mm undoped GaN layer substrate, followed by 30 nm thick Al0.3Ga 0.7N layer. Structural and optical properties of GaN layer were characterized by high resolution X-ray diffraction, transmission electron microscopy (TEM) and photoluminescence (PL) measurements. TEM images showed the dislocation density in the GaN layer was ~ 9 ´ 109 /cm2 . The full width at half maximum (FWHM) values of the x-ray rocking curve for GaN (0002) was 0.156 deg. PL spectra of our sample exhibited a predominant band-edge emission of the wurzite GaN epilayer near 3.36 eV with FWHM = 45 meV at 50 K and 75 meV at room temperature, respectively. The Hall effect measurements gave a sheet electron concentration of 7.8´1012 cm-2 and a mobility of 850 cm2/Vs at 300K. The experimental data indicated that the HVPE grown GaN layers exhibited superior quality compared to GaN layers grown by metal organic chemical vapor deposition in prior art literatures. | ||||
Keywords | ||||
hydride vapor phase epitaxy; GaN; two-dimensional electron gas; heterostructure | ||||
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