Fabrication And Characterization Of Amorphous Si/Al/Ag Multilayers For Optoelectronic Devices | ||||
| Egyptian Journal of Chemistry | ||||
| Volume 68, Issue 8, August 2025, Page 471-484 PDF (1.62 MB) | ||||
| Document Type: Original Article | ||||
| DOI: 10.21608/ejchem.2024.323495.10538 | ||||
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| Authors | ||||
H. El-Desouky1; S. Hassan1; A El -Shaer2; M Abo Ghazala1; Tarek Y Elrasasi  3
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| 1Faculty of Science, Menoufia University, Shebin El-Koom, Menoufia, 32511, Egypt | ||||
| 2Faculty of Science, Kafrelshiekh University, Kafr Elshaikh, Egypt. | ||||
| 3Lecturer of Solid State Physics Benha University | ||||
| Abstract | ||||
| Multilayer thin films of a-Si/Si, a-Si/Ag, and a-Si/Al/Ag were prepared on quartz substrates via thermal evaporation techniques followed by annealing at 500°C for one hour at low vacuum. The thermal, optical, and electrical measurements were investigated using TGA, U-V spectrophotometer, and RLC circuit. The results showed an oxidation occurrence during annealing for all samples. The results of the optical properties, such as the extinction coefficient and refractive index, revealed enhancements attributable to oxidation and the transition is direct to the band gap around 1.5 eV. The electrical properties were assessed by analyzing AC conductivity within the frequency range of 100 Hz to 500 KHz across different temperatures (300 to 370 K)., The results of AC indicate the presence of two conduction mechanisms -hopping and tunneling- dependent on frequency, temperature, and oxidation. Additionally, the I-V characteristic curves of the samples exhibited ohmic behavior, with resistance decreasing under light illumination suggesting potential applications in optoelectronic devices. | ||||
| Keywords | ||||
| Optoelectronics; amorphous silicon-metal multilayers; surface Plasmon' s; hopping and tunneling conduction | ||||
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