On the Use of Forward Body Biasing Technique for Low Power Ultra-Wideband Low Noise Amplifiers Design and Implementation | ||||
| JES. Journal of Engineering Sciences | ||||
| Article 6, Volume 53, Issue 1, January and February 2025, Page 82-101 PDF (2.18 MB) | ||||
| Document Type: Research Paper | ||||
| DOI: 10.21608/jesaun.2024.322085.1368 | ||||
 View on SCiNiTO | ||||
| Authors | ||||
Mohammed Adel ; Usama Sayed Mohammed; Khalil Yousef 
| ||||
| Electrical Engineering Department,Faculty of Engineering,Assiut University, Assiut, Egypt | ||||
| Abstract | ||||
| This paper discusses the utilization of forward body biasing (FBB) technique for low power low noise amplifier (LNA) design. Two low power wideband LNAs utilizing current reuse with FBB technique are being presented. LNA1 is a cascode (common gate followed by common source) LNA while LNA2 is implemented as a current reuse (common source followed by common source). FBB is used for presented LNAs input gates’ transconductance boosting. LNA1 has a minimum post layout noise of 3.9 dB and a maximum gain of 12.5 dB. Its circuit current that derived from 0.65 voltage supply is only 1.68 mA. LNA2 achieves a high post-layout gain. Its maximum value is 13.6dB. It has a flattened post-layout noise figure with a minimum value of 3.19 dB. It is powered from a 0.615V and drives a current of 10.7 mA. With a dissipated power of 1.09 mW and 6.58 mW for LNA1 and LNA2, respectively, both LNAs have good isolation performance. LNA1 and LNA2 have output and input matching impedance over the ultra-wideband (UWB) frequency range of interest (3.1~10.6 GHz). These low power ultra-wideband LNAs are designed and simulated in CMOS 130nm process. | ||||
| Keywords | ||||
| Cascode; Current Reuse; Forward Body Biasing | ||||
| References | ||||
|
[1] J.-Y Lee, H.-K. Park, et al., “Low power UWB LNA with common-gate and current reuse techniques,” IET Microw. Antennas Propag. 2012, vol. 6, no. 7, pp. 793-799.
[2] K. Yousef, H. Jia, R. Pokharel, A. Allam, M. Ragab, H. Kanaya, and K. Yoshida, "CMOS ultra-wideband low noise amplifier (UWB-LNA) using symmetric 3D RF integrated inductor," 2013 IEEE International Conference on Ultra-Wideband (ICUWB), pp. 267-269.
[3] D. Dubey and A. Gupta, "A low power low noise amplifier for biomedical applications," 2015 IEEE International Conference on Electrical, Computer and Communication Technologies (ICECCT), 2015, pp. 1-6.
[4] Razavi, Behzad. “RF Microelectronics”. : Prentice Hall, 1998.
[5] Y. -H. Cheng, C. -C. Chiong, Y. -S. Wang and H. Wang, "A 1.4-mW Ka-band Low Noise Amplifier Using Self-Resonant Transformer Matching in 90-nm CMOS Process," 2023 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), Cairns, Australia, 2023, pp. 14-16, doi: 10.1109/RFIT58767.2023.10243353.
[6] Y. -W. Huang et al., "A Low Power, Wideband Low-Noise Amplifier with Current-Reused Techniques in 0.18-μm CMOS for 5G Wireless Systems," 2022 Asia-Pacific Microwave Conference (APMC), Yokohama, Japan, 2022, pp. 7-9, doi: 10.23919/APMC55665.2022.9999969.
[7] F. Linling, Z. Youming, T. Xusheng, Y. Cao and F. Huang, "A Wideband Low-Noise Amplifier in 0.13-µm CMOS," 2022 7th International Conference on Integrated Circuits and Microsystems (ICICM), Xi'an, China, 2022, pp. 330-333, doi: 10.1109/ICICM56102.2022.10011244.
[8] S. Rai, S. R. Gupta, S. Jain, S. K. Dubey and G. Mehra, "0.7 V UWB LNA for 2.1-13.2 GHz Wireless Applications using 65-nm CMOS Technology," 2021 5th International Conference on Electronics, Comm. and Aerospace Technology (ICECA), 2021, pp. 122-126.
[9] M. Rafati, A.Nejati, P.Amiri, A 3.1-10.6 GHz Forward Body Biased Ultra-low voltage UWB LNA, 27th Iranian Conference on Electrical Engineering, ICEE 2019, pp. 326-330.
[10] Jyh-Chyurn Guo, Ching-Shiang Lin, and Yu-Tang Liang, “Low Voltage and Low power UWB CMOS LNA using Current-Reused and Forward Body Biasing Techniques”, IEEE MTT-S International Microwave Symposium (IMS), 2017, pp. 764-767.
[11] K. Yousef, H. Jia, R. Pokharel, A. Allam, M. Ragab, H. Kanaya and K. Yoshida, “Low Power, Low Voltage CMOS Ultra-Wideband Low Noise Amplifier for Portable Devices,” Second International Japan-Egypt Conference on Electronics, Communications and Computers (JEC-ECC 2013), pp. 68-70.
[12] Chang-Ching Wu, “A 2.2mW CMOS LNA for 6-8.5GHz UWB Receivers”, IEEE International Symposium on Circuits and Systems, 2010, pp. 1631-1634.
[13] Y. Lin, Ch. Chen, H. Yang, et al., “Analysis and Design of a CMOS UWB LNA With Dual-RLC-Branch Wideband Input Matching Network,” IEEE Trans. on Microwave Theory and Techniques, vol. 58, no. 2, pp. 287-296, Feb. 2010.
[14] B. Razavi, Design of Analog CMOS Integrated Circuits, 1st Ed. New York, NY, USA: McGraw-Hill, Inc., 2001.
[15] W.-S. Kim, X. Li, and M. Ismail, “A 2.4 GHz CMOS low noise amplifier using an interstage matching inductor”, Proc. 42nd Midwest Symp. Circuits Syst., vol. 2, 1999, pp.1040 -1043.
[16] Gladson, S.C., Narayana, A.H., Thenmozhi, V. et al. A 219-µW ultra-low power low-noise amplifier for IEEE 802.15.4 based battery powered, portable, wearable IoT applications. SN Appl. Sci. 3, 459 (2021). https://doi.org/10.1007/s42452-021-04402-0
[17] Wu, Weiping, Shih-Tun Chen, Xun Bao, Lei Zhang and Yan Wang. “An Ultra-Wideband Amplifier with Compact Magnetically Coupled Feedback Gain Cell.” 2023 21st IEEE Interregional NEWCAS Conference (NEWCAS) (2023): 1-4. | ||||
|
Statistics Article View: 318 PDF Download: 312 |
||||
