The Effect of Power MOSFET Materials on their Switching Performance | ||||
| Journal of Scientific Research in Science | ||||
| Volume 41, Issue 1, 2024, Page 93-111 PDF (1.86 MB) | ||||
| Document Type: Original Article | ||||
| DOI: 10.21608/jsrs.2024.311063.1132 | ||||
 View on SCiNiTO | ||||
| Authors | ||||
asmaa Salama Ibrahim1; Sanaa Abd El tawab Kamh 1; Fouad Saad soliman2; Doaa Hassan Hanafy  1
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| 1Electronic Research Lab. (E.R.L.), Physics Department, Faculty of Women for Arts, Science, and Education, Ain-Shams University, Cairo, Egypt. | ||||
| 2Electronics Engineering Department, Nuclear Materials Authority, Ministry of Electricity and Renewable Energy, Cairo, Egypt. | ||||
| Abstract | ||||
| Power semiconductor devices have a great impact on the modern society electronic system applications. The study aims to improve the switching performance of power MOSFET devices based on materials with different bandgap structures and technologies. In this concern, the static electrical characteristics of three power MOSFET devices made of Silicon (Si-MTP20N15E; Eg = 1.12 eV), Silicon Carbide (SiC-TW107N65C; Eg = 3.25 eV) and Gallium Nitride (GaN-TPH3208PS-ND; Eg = 3.44 eV), operating at the enhancement mode were tested. Moreover, the design and implementation of their switching circuits were investigated at frequency of 1.0 kHz. In addition, the influence of their materials on the switching times was studied. From which, it is noted that, GaN MOSFET has the fastest switching ON/OFF times (0.3µs /0.34µs), rather than SiC and Si. Where, their switching ON/OFF times were reported to be (0.37µs /0.52µs and 0.76µs /0.8µs), respectively. These findings underscore the potential of wide bandgap materials in enhancing the performance of power electronic devices. | ||||
| Keywords | ||||
| Switching times; power devices; MOSFET materials; Silicon; Silicon Carbide and Gallium Nitride | ||||
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