Optimization and Performance Analysis of Dye-Sensitized Solar Cells : Comparative Study of Blend and Layer Configurations with Enhanced Efficiency through SnO2 Integration | ||||
Egyptian Journal of Chemistry | ||||
Volume 68, Issue 10, October 2025, Page 413-427 PDF (4.46 MB) | ||||
Document Type: Original Article | ||||
DOI: 10.21608/ejchem.2025.352944.11165 | ||||
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Authors | ||||
Menah Samy Mohamed ![]() ![]() ![]() | ||||
1Department of Basic Engineering Sciences, Benha Faculty of Engineering, Benha University, Benha, Egypt | ||||
2Department of Electrical and Electronic Engineering, Faculty of Engineering, May University in Cairo (MUC), Egypt | ||||
Abstract | ||||
For their low cost and environmental friendliness, dye sensitized solar cells (DSSC) are becoming more popular as a yet strongly evolving strain of solar cells. In this paper development of a simulation based on two different models (layer and blend configurations) is made using SCAPS-1D. The two structures of DSSC employed in this work are composed of (1) FTO/Tio2/MK2 dye/PGE/pt and (2) FTO/Tio2 & MK2 dye/PGE/pt respectively. The effect of ETL and HTL thicknesses, working temperature, doping in ETL, electron mobility, and defect density at interface between active layer and HTM on different parameters of the DSSC are studied. In each case Voc, Jsc, FF, and PCE parameters are analyzed. The obtained results are contrasted with those of experiments indicating that using blend configuration yields a better concurring behavior compared to the layer configuration. Optimization process has been done on the blend structure increasing the efficiency from 5.5109 % up to 16.2702 %. A novel dye sensitized solar cell structure is reported in this paper replacing Tio2 with Sno2 commended by its characteristic superiority raising the cell efficiency to 19.77 %. The outcomes demonstrate that this innovative DSSC structure has promising commercialization potential. | ||||
Keywords | ||||
Dye sensitized solar cells • polymer gel electrolyte (PGE) • Electron transport layer (ETL) • J; V characteristics. SCAPS-1D | ||||
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