Investigating the effect of thermal stresses on Multijunction PV solar cells | ||||
| The International Conference on Applied Mechanics and Mechanical Engineering | ||||
| Volume 22, Issue 22, October 2025, Page 1-12 PDF (692.5 K) | ||||
| Document Type: Original Article | ||||
| DOI: 10.1088/1757-899X/973/1/amme.2025.449035 | ||||
 View on SCiNiTO | ||||
| Authors | ||||
Reem H Ahmed  1; I El-Mahallawi2; Mahmoud Tash3
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| 1Faculty of Engineering, Department of Mechanical Engineering, The British University in Egypt, El-Sherouk City, Cairo 11837, Egypt. | ||||
| 2Faculty of Engineering, Department of Mechanical Engineering, The British University in Egypt, El-Sherouk City, Cairo 11837, Egypt., Mining, Petroleum, and Metallurgical Engineering Dept., Faculty of Engineering, Cairo University, Giza, 12613, Egypt. | ||||
| 3Mining, Petroleum, and Metallurgical Engineering Dept., Faculty of Engineering, Cairo University, Giza, 12613, Egypt. | ||||
| Abstract | ||||
| Multijunction Photovoltaics (MJPV) technologies represent a field of robust research aimed at enhancing photovoltaic efficiencies. Perovskite, GaAs, and GaN semiconductors with organic substrates are suitable for multi-junction solar cells due to their ease, efficiency, and cost-effectiveness in deposition on the active layers of silicon solar cells. Thermal stresses arise at the manufacturing and operational temperatures of Si/indium/perovskite, Si/indium/GaN, and Si/indium/GaAs multijunction photovoltaic cells due to thermal mismatch. This work aims to evaluate the effects of thermal loading on a multi-junction system composed of perovskite, GaAs, and GaN particles on silicon, utilising finite element analysis software (ABAQUS) and representative volume elements (RVE). One method experienced reduced stress compared to the other because of the differing material properties. Moreover, the GaAs region of model (C) experiences the highest level of stress. Quantitative analysis indicated that the Model C, that includes GaAs as upper layer, exhibited the highest thermal stress concentration at 48MPa, notably exceeding the other models; for instance, Model B with GaN recorded a peak stress of 45.5 MPa, while Model A displayed a maximum stress of 41 MPa in the indium section. These findings highlight the influence of material characteristics on stress distribution in multijunction solar cells. Future research will examine the impact of different thermal configurations relevant to the operational conditions of solar panels and utilise the Embedded Void Approach (EVA) to mitigate dislocation propagation induced by elevated thermal stresses. | ||||
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