Analytical study of pulsed laser irradiation on some materials used for photovoltaic cells on satellites | ||
| NRIAG Journal of Astronomy and Geophysics | ||
| Volume 4, Issue 2, December 2015, Pages 256-265 PDF (3.53 M) | ||
| DOI: 10.1016/j.nrjag.2015.09.005 | ||
| Author | ||
| M. Sabry | ||
| Abstract | ||
| The present research concerns on the study of laser-powered solar panels used for space applications. A mathematical model representing the laser effects on semiconductors has been developed. The temperature behavior and heat flow on the surface and through a slab has been studied after exposed to nano-second pulsed laser. The model is applied on two different types of common active semiconductor materials that used for photovoltaic cells fabrication as silicon (Si), and gallium arsenide (GaAs). These materials are used for receivers’ manufacture for laser beamed power in space. Various values of time are estimated to clarify the heat flow through the material sample and generated under the effects of pulsed laser irradiation. These effects are theoretically studied in order to determine the performance limits of the solar cells when they are powered by laser radiation during the satellite eclipse. Moreover, the obtained results are carried out to optimize conversion efficiency of photovoltaic cells and may be helpful to give more explanation for layout of the light-electricity space systems. | ||
| Keywords | ||
| Pulsed laser; Si and GaAs; Heating process; Temperature; analysis | ||
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