AC conductivity and optical properties of In2S3 thin films synthesized by thermal evaporation technique | ||
| Sohag Journal of Sciences | ||
| Volume 10, Issue 4 - Serial Number 3, December 2025, Pages 544-550 PDF (940.24 K) | ||
| Document Type: Regular Articles | ||
| DOI: 10.21608/sjsci.2025.418761.1306 | ||
| Authors | ||
| Bosy Yassin* 1; Mohamed Khairy2; Amr Attia Abuelwafa3; Moumen Samir Kamel4; E. Kh Shokr4; Mohamed B. Zahran5; E. M.M. Ibrahim4 | ||
| 1Physics department, Faculty of science, Sohag university | ||
| 2Chemistry Department, Faculty of Science, Sohag University, Sohag, 82524, Egypt | ||
| 3Nano & Thin film lab. Physics Department, Faculty of Science, South Valley University, Qena 83523, Egypt | ||
| 4Physics department, Faculty of science, Sohag University, Sohag 82524, Egypt | ||
| 5Joint national Egyptian-Chinese Renewable energy laboratory, Sohag, Egypt. PV Dep. Electronic institute Nozha elgedida, Cairo, Egypt. | ||
| Abstract | ||
| Indium sulfide (In2S3) thin films were successfully deposited on glass substrate using the thermal evaporation technique. The structural, optical, electrical, and dielectric properties of the films were systematically investigated. X-ray diffraction and FE-SEM analyses confirmed the amorphous nature of the films with nanometric particle sizes and uniform surface morphology. Optical measurements revealed a high transmittance (>90%) and a direct optical band gap of 2.34 ± 0.00468 eV, slightly larger than the bulk value, likely due to quantum confinement effects. The Urbach energy was estimated to be 0.41± 0.0036 eV, indicating a high density of localized states. AC conductivity measurements were performed over a frequency range of 100 kHz to 8 MHz and temperature range of 303–373 K, showed two distinct conduction regions. The frequency-dependent behavior at higher frequencies followed Jonscher’s universal power law, and the conduction mechanism was found to be consistent with the correlated barrier hopping (CBH) model. the activation energy was obtained to be 0.076 ± 0.0023ev. Dielectric studies demonstrated strong temperature and frequency dependence of both real and imaginary permittivity components, highlighting the role of space charge and rotational dipolar polarization. The combined findings underscore the potential of thermally evaporated In2S3 thin films for optoelectronic and dielectric applications. | ||
| Keywords | ||
| Indium sulfide; electrical properties; dielectric constant; solar cell; photovoltaic | ||
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