Intensity-Dependent Saturable Absorption Performance of CdSe Quantum Dots | ||
| Egyptian Journal of Chemistry | ||
| Articles in Press, Accepted Manuscript, Available Online from 20 November 2025 | ||
| Document Type: Original Article | ||
| DOI: 10.21608/ejchem.2025.398453.11973 | ||
| Authors | ||
| Abeer Salah* 1; Shaimaa Helayl2; Yehia Badr1; Salah Hassab-Elnaby3 | ||
| 1Department of Laser Sciences and Interactions, National Institute of Laser Enhanced Sciences, Cairo University, PO 12613, Giza, Egypt | ||
| 2Department of laser sciences and interactions LSI, National Institute of Laser Enhanced Sciences (NILES), Cairo University, Giza 12613, Egypt | ||
| 3Department of engineering applications of lasers EAL, National Institute of Laser Enhanced Sciences (NILES), Cairo University, Giza 12613, Egypt | ||
| Abstract | ||
| In this work, CdSe quantum dots QDs were prepared by microwave irradiation reduction. The particles are monodispersed, spherical, and the average particle size of the synthesized CdSe QDs was about 3.5±0.4 nm as indicated by high-resolution transmission electron microscope (HRTEM) images. The linear absorption UV-Visible and photoluminescence (PL) spectra exhibit strong peaks at 590, 610 nm, respectively. An open-aperture Z-scan setup was used to calculate the nonlinear absorption coefficient β. The experimental setup was constructed using a 532 nm (Nd: YAG) laser with a pulse duration of 6 ns. A negative value of β indicates that CdSe QDs exhibit negative saturable absorption due to the existence of saturable absorption SA over the reverse saturable absorption RSA. At higher input intensity, SA is dominant over RSA. So, CdSe can be used in Q-switching applications due to SA features. | ||
| Keywords | ||
| semiconductor quantum dots; saturable absorption; nonlinear absorption; microwave irradiation; open aperture Z-scan | ||
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