A PROPOSED METHOD FOR IMPROVING THE PERFORMANC OF P-TYPE InP IMPATT | ||||
| The International Conference on Electrical Engineering | ||||
| Article 34, Volume 2, 2nd International Conference on Electrical Engineering ICEENG 1999, November 1999, Page 327-336 PDF (1.87 MB) | ||||
| Document Type: Original Article | ||||
| DOI: 10.21608/iceeng.1999.62516 | ||||
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| Author | ||||
| Hosny A. El-Motaafy | ||||
| Dept. of Electronics and Computer Engineering, Higher Tech. Institute, 10th of Ramadan City | ||||
| Abstract | ||||
| A special waveform is proposed and assumed to be the optimum waveform for p-type InP IMPATTs. This waveform is deduced after careful and extensive study of the performance of these devices. The results presented here indicate the superiority of the performance of the IMPATTs driven by the proposed waveform over that obtained when the same IMPATTs are driven by the conventional sinusoidal waveform. The results presented here are obtained using a full-scale computer simulation program that takes fully into account all the physical effects pertinent to IMPATT operation. In this paper, it is indicated that the superiority of the proposed waveform is attributed to its ability to reduce the bad effects that usually degrade the IMPATT performance such as the space-charge effect and the drift-velocity dropping below saturation effect. The superiority is also attributed to the ability of the proposed waveform to improve the phase relationship between the terminal voltage and the induced current. | ||||
| Keywords | ||||
| IMPATT diode; In P; Special waveforms; Avalanche process; Space-charge effect; Drift velocity; Velocity-field characteristic; Drift-velocity dropping below saturation | ||||
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