Effect of Diode Power Losses on the Operation of Boost Converter System | ||||
| Journal of Scientific Research in Science | ||||
| Article 19, Volume 34, part1, September 2017, Page 287-297 PDF (659.01 K) | ||||
| Document Type: Original Article | ||||
| DOI: 10.21608/jsrs.2018.14051 | ||||
 View on SCiNiTO | ||||
| Authors | ||||
Soha M Abd El-Azeem  ; S. M. El-Ghanam; M. Ismail
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| 1- Electronic Res. Lab (E.R.L)., Faculty of Women for Arst, Science, and Education, Ain Shams Univ., Cairo, Egypt. | ||||
| Abstract | ||||
| The paper presents a study on the effect of diode power losses on the operation of 5/24.4 VDC boost converter based on MOSFET switch type STP36NF06. In this concern, a comparative study between the system performances in the discontinuous conduction mode was carried out whenever; MBRS130LT3G Schottky diode and FR101 fast recovery diode were applied. It was found that, the boost converter output voltage was 20.0 Volts with voltage ripple of 1.4 Volts, using MBRS130LT3G Schottky diode. Moreover, the output voltage reached 18.6 Volts with voltage ripple of 1.6 Volts, whenever FR101 fast recovery diode was used. On the other hand, the peak ringing voltage and parasitic ringing values at the switch node were 4.8 Volts and 454 kHz, respectively applying Schottky diode. While, their values were 8.0 Volts and 463.1 kHz applying fast recovery diode. | ||||
| Keywords | ||||
| Boost converter system; discontinuous conduction mode; MOSFET switch; Schottky diode and fast recovery diode | ||||
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