A Framework for Automatic Generation of Neural Models of Electron Devices | ||||
| Journal of the ACS Advances in Computer Science | ||||
| Article 1, Volume 1, Issue 1, 2007, Page 1-14 | ||||
| Document Type: Original Article | ||||
| DOI: 10.21608/asc.2007.147556 | ||||
 View on SCiNiTO | ||||
| Author | ||||
| M. Abdeen Abdeen | ||||
| Faculty of Computer & Information Sciences Ain Shams University, | ||||
| Abstract | ||||
| In this paper a framework for automatic generation of neural network models for the dual-gate MESFET is presented. Values of the large-signal model are extracted from S-parameter measurements at many DC-bias points. The automatic model generation is accomplished by integrating multiple software tools, including one developed by the author, in a homegrown integration environment. The technique is used to model a 6-gate 1x100 μm dual-gate MESFET manufactured by Nortel Networks, Ottawa, Canada. The large-signal model is then verified through a variable gain large-signal amplifier application based on the dual-gate MESFET. Measurements and harmonic balance simulations of the verification circuit showed very good agreement of the first harmonic. For the second and third harmonic, some discrepancies between the measurements and the model are observed. This is mainly due to some model simplifications and second order effect. | ||||
| Keywords | ||||
| Neural Network applications; Computer Aided Design and Modeling | ||||
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