Galvanomagnetic Properties and Anomalous Hall Effect of n-InSb single Crystal and its Device
(2018). Galvanomagnetic Properties and Anomalous Hall Effect of n-InSb single Crystal and its Device. EKB Journal Management System, 41(1), 79-89. doi: 10.21608/ejs.2018.148255
. "Galvanomagnetic Properties and Anomalous Hall Effect of n-InSb single Crystal and its Device". EKB Journal Management System, 41, 1, 2018, 79-89. doi: 10.21608/ejs.2018.148255
(2018). 'Galvanomagnetic Properties and Anomalous Hall Effect of n-InSb single Crystal and its Device', EKB Journal Management System, 41(1), pp. 79-89. doi: 10.21608/ejs.2018.148255
Galvanomagnetic Properties and Anomalous Hall Effect of n-InSb single Crystal and its Device. EKB Journal Management System, 2018; 41(1): 79-89. doi: 10.21608/ejs.2018.148255

Galvanomagnetic Properties and Anomalous Hall Effect of n-InSb single Crystal and its Device

Egyptian Journal of Solids
Article 7, Volume 41, Issue 1 - Serial Number 41, 2018, Page 79-89  XML PDF (923.04 K)
Document Type: Original Article
DOI: 10.21608/ejs.2018.148255
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Abstract
Hall effect experimental procedures was used for determining the electrical resistivity, electron mobility (μe), carrier concentration (η), magnetoresistance (MR) and anomalous Hall effect (AH) as a function of temperature .The obtained curves are discussed in detail. The AH effect is defined as the zero field extrapolation of the high field data. An experiment illustrates the magnetic sensing ability of InSb single crystal was designed, where the InSb resistance value changed under applying external direct magnetic field, for insuring the high sensitivity to the magnetic field of such III-V material.
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