Behaviour of Switching Phenomena in Single Crystals of TlInTe2 Compound | ||||
| Egyptian Journal of Solids | ||||
| Article 5, Volume 31, Issue 1, December 2008, Page 45-54 PDF (120.14 K) | ||||
| Document Type: Original Article | ||||
| DOI: 10.21608/ejs.2008.148821 | ||||
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| Abstract | ||||
| The p–type TlInTe2 single crystals were grown by a directional freezing method based on the Bridgman – Stockbarger technique for crystal growth. The electrical switching effect, in the crystals under work, was investigated at various temperatures (183 to 233 K). The current–voltage characteristics of the above – mentioned compound showed two different regions. An Ohmic region was observed at low current densities and a negative deferential resistance region (NDR) at the moderate and high current densities. In this investigation, the switching parameters (Ith, Vth, Pth, Eth and ROff/ROn) were determined and it was noticed that they are very sensitive to temperature, light intensity and change in the sample thickness. The electrical switching effect was observed in the low temperature region for the TlInTe2 single crystals, whereas the I–V measurements exhibit no switching phenomenon at room temperature and in the high temperature region. It was also remarked that if the current slowly decreases to its zero value, the memory state persists. However if the current was forced to suddenly decrease, the specimen returns to its high resistance state. In addition, the samples under investigation showed that a holding current (Ith) was found to be independent of temperature and the holding voltage (Vth) was observed to be decreased with the increase in temperature. | ||||
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