Transport Properties of Ge1-xMnxSe System | ||||
| Egyptian Journal of Solids | ||||
| Article 11, Volume 34, Issue 1, 2011, Page 137-151 PDF (567.05 K) | ||||
| DOI: 10.21608/ejs.2011.148866 | ||||
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| Abstract | ||||
| Study of the ac and dc conductivities of semimagnetic semiconductor Ge1-xMnxSe (x = 0.1 and 0.2) has been carried out. The activation energy and the pre-exponential factor which appear in the dc conductivity are found to decrease with increasing Mn. The dielectric response and ac conductivity of the samples are investigated in the frequency range from 50 Hz to 5 MHz and temperature range from 300 to 420 K. The obtained data reveal that sac(w) obey the relation sac(w) = A ws, and the exponent s was found to be » 1. The analysis of results shows that the dominant conduction mechanism follows the quantum mechanical tunneling (QMT). The ESR spectra showed that the investigated samples are paramagnetic materials at room temperature. The calculated number of defects illustrates that with increasing Mn the number of defects increases. The magnetic properties are determined by the measurement of magnetization as a function of magnetic field. The results indicated the paramagnetic behavior for x = 0.1. While as x increased to 0.2 the results indicated the ferromagnetic exchange interaction between the magnetic ions. Keywords: Transport Properties, Magnetic Properties and Semimagnetic Semiconductors. | ||||
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