Preparation, Electrical Conduction, Hall Effect and Photoconductivity of Thallium Monosulfide Single Crystal | ||||
| Egyptian Journal of Solids | ||||
| Article 4, Volume 30, Issue 2, December 2007, Page 199-210 PDF (204.42 K) | ||||
| Document Type: Original Article | ||||
| DOI: 10.21608/ejs.2007.149039 | ||||
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| Abstract | ||||
| Thallium monosulfide single crystal was prepared and characterized by x–ray diffraction. The electrical measurements in the temperature range form 100 to 360 K, show that σ⊥= 8.9 x 10–7 (Ω.cm)–1 when the current flow direction makes right angle to the cleavage plane of the crystals, and σ // = 1.39 x 10–7 (Ω.cm)–1 when the current flows is parallel to the cleavage plane. The width of the band gap was calculated from the electrical data and found to be Eg = 1.1eV. The anisotropy of the electrical conductivity (σ⊥/σ//) was also studied in this work. The photosensitivity was calculated for different levels of illumination which showed that the recombination process in TIS single crystals is monomolecular | ||||
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