Improving Optical Transmission of Indium Tin Oxide (ITO) thin films prepared by Femtosecond Laser ablation | ||||
| Egyptian Journal of Solids | ||||
| Article 8, Volume 34, Issue 2, 2011, Page 99-109 PDF (572.97 K) | ||||
| DOI: 10.21608/ejs.2011.149122 | ||||
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| Abstract | ||||
| Indium–tin–oxide (ITO) thin films have been grown by ultrafast femtosecond laser ablation technique. The films prepared at different deposition temperature (24 to 400 °C) then annealed at 400 oC for 1h under vacuum. The structural, optical, and electrical properties of ITO films were studied as a function of the substrate deposition temperature and compared to the annealed films. The increase in the deposition temperature resulted in an increase in the crystallinity as estimated from the preferential direction of ITO (222), optical transmission also increases, and electrical sheet resistance decreases. Annealing at 400 oC for 1h under vacuum, cause further increase in the crystallinity, optical transmission and decrease in the electrical sheet resistance. These results may help to increase the efficiency of the photovoltaic cells. | ||||
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