Dielectric Relaxation in CdxInSe9-x Chalcogenide Thin Films | ||||
| Egyptian Journal of Solids | ||||
| Article 7, Volume 29, Issue 2, 2006, Page 303-316 PDF (230.73 K) | ||||
| DOI: 10.21608/ejs.2006.149278 | ||||
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| Abstract | ||||
| The effect of temperature (273-493 K), frequency (102-105 Hz) and composition on the dielectric response of the CdxInSe9-x (x= 1,2,3,4 and 5) Chalcogenide glass system was studied. The experimental results indicate that dielectric constant (real permittivity), dielectric loss and loss angle έ, ε'' and tan δ, increase with increasing temperature. The complex impedance (Z) was measured over the same temperature and frequency ranges. All samples gave a semicircle arc originating at the origin point. This indicates that each composition can be described only by one bulk resistance Rb and one capacity Cb, both parallels combined. The centre below the real axis indicates the relaxation behaviour of the system. The dielectric dispersion is characterized by the distribution of the relaxation time induced by polarized species contribution (orientational, interfacial, electronic and ionic dipoles). The free energy (ΔF) and the enthalpy (ΔH) of the dipoles are estimated for the investigated compositions. | ||||
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