The Phenomena of Amplification in 2D Photonic Macroporous Silicon | ||||
| Egyptian Journal of Solids | ||||
| Article 1, Volume 27, Issue 2, 2004, Page 159-173 PDF (689.31 K) | ||||
| DOI: 10.21608/ejs.2004.149842 | ||||
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| Abstract | ||||
| Effects of increase in absorption of electromagnetic radiation, amplification of photoconductivity and Raman scattering by 2D structures of macroporous silicon were investigated. Maximal photoconductivity was measured (1) at normal incidence of electromagnetic radiation, (2) at a critical angle concerning macropore walls and (3) at a grazing angle concerning a surface of structure. Angular dependences of photoconductivity, as well as enhancement of the photoconductivity in comparison with monocrystal silicon, primary absorption р-component of electromagnetic radiation testified to formation of surface electromagnetic waves in illuminated macrporous silicon structures. Its effects result in amplification of a local electric field on a surface of macroporous silicon structure and a macropore surface. Electric components of an electromagnetic field on macropore surface are transferred in volume to distance about le. Shift of a spectrum maximum in the long-wavelength party is observed at the maximal amplification of photoconductivity. The measured built-in electric field on a macropore surface achieves 106 V/cm, the signal of photoconductivity amplifies 102 times, and Raman scattering - up to one order of value. | ||||
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