Effect of Oblique Illumination on Photoconductivity Phenomena | ||||
| Egyptian Journal of Solids | ||||
| Article 9, Volume 26, Issue 1, 2003, Page 93-102 PDF (216.98 K) | ||||
| DOI: 10.21608/ejs.2003.150019 | ||||
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| Abstract | ||||
| Photoconductivity studies were carried out on Ga2Se single crystals prepared from melt. The effect of light intensity, applied voltage and side illumination on the AC Photoconductivity was studied. Also the spectral distribution of the DC Photoconductivity was investigated. Lifetime relations of the charge carriers were discussed. The forbidden energy gap at room temperature, for this crystal, was also calculated and found to be 0.49 eV | ||||
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