Accurate Site Occupancies for the O-atoms Diffused into the Annealed ZnSe Lattice | ||||
| Egyptian Journal of Solids | ||||
| Article 4, Volume 23, Issue 1, 2000, Page 37-44 PDF (49.68 K) | ||||
| DOI: 10.21608/ejs.2000.151471 | ||||
 View on SCiNiTO | ||||
| Abstract | ||||
| The structural problem of oxygen diffusion into the ZnSe lattice annealed in air at different temperatures was studied. Different possible sites were tried for oxygen accommodation. It is found that oxygen atoms diffuse into the vacant sites of the Se atoms formed due to Se evaporation. The relative occupancy of the diffused oxygen was determined as a function of annealing temperature. ZnSeO3 and ZnO phases start to develop at a temperature of 623 K and a period of 30 hours annealing time. | ||||
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