Large-Area Polycrystalline Silicon Substrates Using Unidirectionally Solidified Metallurgical-Grade Silicon for Solar Cell Applications. | ||||
| MEJ- Mansoura Engineering Journal | ||||
| Article 11, Volume 14, Issue 2, December 1989, Page 63-78 PDF (1.15 MB) | ||||
| Document Type: Research Studies | ||||
| DOI: 10.21608/bfemu.2021.172283 | ||||
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| Author | ||||
| Roshdy A. Abderrassoul* | ||||
| Telecommunications Department, Faculty of Engineering, Mansoura University, Mansoura, Egypt. | ||||
| Abstract | ||||
| Large area polycrystalline, silicon substrates were prepared by the unidirectional solidification of metallurgical silicon on graphite. The silicon was firest purified by continuous heating with aqua-regia and then gettered with p < sub>2o5 at 1050 oC. Substrates had elongated silicon grains, up to several centimeters long. X-ray diffraction and spreading resistance measurements showed that the substrates were 0.03 0hm. Cm, n-type of (110) orientation- p – n junction solar cells were fabricated by chemical vapor deposition of a Ti/Ag layer through a metal mask. A thin film of Sno2 was used as an AR coating. The cell efficiency under AM1 conditions, open circuit voltage, short circuit current, and fill factor were measured to be 9.75 %, 568 mv, 23 mA/cm2, and 0.78, respectively, for a 30 cm2 cell with AR coating. Heat treatment in hydrogen at 900 oC was found to improve the cell efficiency by 15 – 20 % . | ||||
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