Silicon Based Cadmium Sulphide and Zinc Sulphide Heterojunction Photovoltaic Solar Cell.
El-Awady, R., Soliman, F., Abouelfotouh, F., Abd El-Naby, M. (2021). Silicon Based Cadmium Sulphide and Zinc Sulphide Heterojunction Photovoltaic Solar Cell.. EKB Journal Management System, 7(1), 1-7. doi: 10.21608/bfemu.1982.180429
Rasheed M. El-Awady; Fayez Wanis Zaky Soliman; F. A. Abouelfotouh; M. M. Abd El-Naby. "Silicon Based Cadmium Sulphide and Zinc Sulphide Heterojunction Photovoltaic Solar Cell.". EKB Journal Management System, 7, 1, 2021, 1-7. doi: 10.21608/bfemu.1982.180429
El-Awady, R., Soliman, F., Abouelfotouh, F., Abd El-Naby, M. (2021). 'Silicon Based Cadmium Sulphide and Zinc Sulphide Heterojunction Photovoltaic Solar Cell.', EKB Journal Management System, 7(1), pp. 1-7. doi: 10.21608/bfemu.1982.180429
El-Awady, R., Soliman, F., Abouelfotouh, F., Abd El-Naby, M. Silicon Based Cadmium Sulphide and Zinc Sulphide Heterojunction Photovoltaic Solar Cell.. EKB Journal Management System, 2021; 7(1): 1-7. doi: 10.21608/bfemu.1982.180429

Silicon Based Cadmium Sulphide and Zinc Sulphide Heterojunction Photovoltaic Solar Cell.

MEJ- Mansoura Engineering Journal
Article 3, Volume 7, Issue 1, June 1982, Page 1-7  XML PDF (513.11 K)
Document Type: Research Studies
DOI: 10.21608/bfemu.1982.180429
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Authors
Rasheed M. El-Awady* 1; Fayez Wanis Zaky Soliman1; F. A. Abouelfotouh2; M. M. Abd El-Naby1
1Assistant Professor, Electronics and Electrical Communication Engineering Department, Faculty of Engineering, Mansoura University, Mansoura, Egypt.
2Physics Department, Faculty of Engineering, University of Cairo.
Abstract
The practical utilization of photovoltaic effect in hybrid junction between P-Si substrates and n-(Znx-Cd1-x)S was observed. The performance of junctions prepared on hot substrates (Tab > 200oC) , and annealed in sulfur and air atmosphere for 20 minutes at temperature Ta> 350oC is given by 0o57 V for Voc, 15 MA/cm for Isc and 7 percent for conversion efficiency.
A proper cleaning method to get rid oxygen contaminating the Si surface is necessary.
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