Electrical Conduction Mechanisms and Dielectric Constants of Nanostructure Zinc Indium Selenide Thin Films | ||||
Scientific Journal for Damietta Faculty of Science | ||||
Volume 4, Issue 1, 2015, Page 79-89 PDF (496.16 K) | ||||
Document Type: Original articles | ||||
DOI: 10.21608/sjdfs.2015.194437 | ||||
View on SCiNiTO | ||||
Authors | ||||
H. M. Zeyada 1; M. I. Youssif2; N. A. El-Ghamaz2; M. S. Aburoja3 | ||||
1Department of physics, Faculty of science,34517, University of Damietta. Egypt | ||||
2Department of physics, faculty of science at New Damietta, 34517, university of Damietta. Egypt | ||||
3Department of physics, Faculty of science, Al-Jabl Al-Gharbi University, Libya | ||||
Abstract | ||||
ZnIn2Se4 has polycrystalline structure in as synthesized powder form; it becomes nanocrystallites upon thermal deposition. The crystallite size increases by increasing annealing temperature. The radial distribution function showed that in the first short range order shell; Se atom is tetrahedral surrounded by a vacancy and three cationic sites occupied by the metal atoms in the ratio 2/3 of In and 1/3 of Zn. The medium range order region is attributed to In-In pairs having a layered structure of connected distorted octahedral. The direct current density–voltage characteristics for Au / ZnIn2Se4 / Au of planar structure revealed three conduction mechanisms depending on applied potential; namely they are consequently generation- recombination, Ohmic and exponential trap space charge limited conduction mechanisms. The AC electrical conductivity and dielectric relaxation of ZnIn2Se4 thin films in the temperature range 305–493 K and in frequency range 1 kHz –4M Hz has also been studied. Analysis of lnac- ln ω curves showed that band-type conduction process occurs in frequency range < 1945 Hz. For frequencies > 1945 Hz, ac increases linearly with the increase in frequency and this is associated with hopping type conduction mechanism. Analysis of these results proved that conduction occurs by phonon assisted hopping between localized states and it is performed by bipolaron hopping mechanism. The temperature and frequency dependence of both the real and imaginary parts of the dielectric constant have been investigated.. | ||||
Keywords | ||||
ZnIn2Se4 thin film; Conduction mechanisms; Dielectric constants | ||||
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