A Novel XOR Gate Using Single Electron Tunneling Technology.
Rehan, S. (2021). A Novel XOR Gate Using Single Electron Tunneling Technology.. EKB Journal Management System, 31(4), 1-8. doi: 10.21608/bfemu.2021.198684
Sameh Rehan. "A Novel XOR Gate Using Single Electron Tunneling Technology.". EKB Journal Management System, 31, 4, 2021, 1-8. doi: 10.21608/bfemu.2021.198684
Rehan, S. (2021). 'A Novel XOR Gate Using Single Electron Tunneling Technology.', EKB Journal Management System, 31(4), pp. 1-8. doi: 10.21608/bfemu.2021.198684
Rehan, S. A Novel XOR Gate Using Single Electron Tunneling Technology.. EKB Journal Management System, 2021; 31(4): 1-8. doi: 10.21608/bfemu.2021.198684

A Novel XOR Gate Using Single Electron Tunneling Technology.

MEJ- Mansoura Engineering Journal
Article 4, Volume 31, Issue 4, December 2006, Page 1-8  XML PDF (953.95 K)
Document Type: Research Studies
DOI: 10.21608/bfemu.2021.198684
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Author
Sameh Rehan email
Assistant Professor., Communications and Electronics Engineering Department Faculty of Engineering., Mansoura University., Mansoura., Egypt 35516
Abstract
Single Electron Tunneling (SET) technology introduces more potential for feature size reduction compared with well-established silicon-based CMOS technology. The SET technology offers the ability to control the motion of individual electrons in the designed circuits, In this paper some of the basic Single Electron Circuits (SEC) found in the literature is reviewed, The complete schematic diagrams of these basic SEC (inc parameters for used devices) along with the corresponding simulation results (using SIMON 2.0) of these SEC are included. Finally, a novel XOR SEC, with detailed schematic and simulation results, is presented The developed XOR SEC can be used as a half-adder SEC.
Keywords
Single Electron; SET; Single Electron Box (SEB); Single Electron Circuits (Sec0; Boolean Logic; Linear Thershold Gate (LTG); XOR
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