A Novel 4-Neuron Hopfield an Using Set Technology. | ||||
| MEJ- Mansoura Engineering Journal | ||||
| Article 9, Volume 31, Issue 4, December 2006, Page 46-52 PDF (765.66 K) | ||||
| Document Type: Research Studies | ||||
| DOI: 10.21608/bfemu.2006.198860 | ||||
 View on SCiNiTO | ||||
| Author | ||||
Sameh Ebrahim Rehan 
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| Assistant Professor and IEEE Member., Communications and Electronics Engineering Department., Faculty of Engineering., El-Mansoura University., Mansoura., Egypt 35516 | ||||
| Abstract | ||||
| Single Electron Tunneling (SET) technology introduces more potential for feature size reduction compared with well-established silicon-based CMOS technology. The SET technology offers the ability to control the motion of individual electrons in the designed circuits, In this paper some of the basic Single Electron Circuits (SECs) found in the literature, are reviewed. The complete schematic diagrams of these basic SECs (inc. parameters for used devices) along with the corresponding simulation results (using the famous Monte Carlo simulator; SIMON 2.0) of these SEC are included. Finally, a novel 4-neuronHopfield ANN SEC is introduced. The full design (inc. detailed schematic diagram) and its Simon 2 simulation results are included. | ||||
| Keywords | ||||
| Single Electron Tunneling (Set); Single Electron Box (SEB); Single Electron Circuits (SEC); Boolean Logic; Linear Threshold Gate (ITG); Artificial Neural Network (ANN); Hopfield ANN | ||||
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