A MODELING OF NEGATIVE RESISTANCE MOSFET FOR METAMATERIALS LOW LOSS OSCILLATORS FOR NANOTECHNOLOGY APPLICATIONS | ||||
| International Conference on Aerospace Sciences and Aviation Technology | ||||
| Article 52, Volume 12, ASAT Conference, 29-31 May 2007, May 2007, Page 1-11 PDF (152.68 K) | ||||
| Document Type: Original Article | ||||
| DOI: 10.21608/asat.2007.23970 | ||||
 View on SCiNiTO | ||||
| Author | ||||
| MOHAMED ALAZAB | ||||
| HIGHER TECHNOLOHICAL INSTITUE, DEPARTMENT OF ELECTRONICS AND COPMUTER ENGINEERING, RAMADAN TENGTH, EGYPT. | ||||
| Abstract | ||||
| This paper presents analysis of the Metamaterials parameters and its dependence on its nanostructure and have linear electric permittivity and magnetic permeability. These parameters affect functionally the energy propagation and losses. It also investigates that these materials need to employ a controllable negative resistance to control the above mentioned parameters and compensate for the nanometric oscillator losses. A new nonnumeric negative resistance MOSFET ( NR-MOSFET) has been proposed, designed and examined for this reason. These losses results from metallic sub wavelength Split-Ring Resonator (SRR) and the metamaterial itself is constructed of arrays of these SRR cells. The basic idea of the negative resistance MOSFET depends on contracting the channel width proportionally as increasing the drain voltage. The new device is expected to have a speed of response which is higher than any of the known traditional techniques, a very low power consumption and a wide dynamic range of resistance variation . This good performance serve to have the desired functionality of the metamaterial. | ||||
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