Characterization of a 808 nm High power Diode Laser module | ||||
| The International Conference on Mathematics and Engineering Physics | ||||
| Article 20, Volume 4, International Conference on Mathematics and Engineering Physics (ICMEP-4), May 2008, Page 1-10 PDF (512.41 K) | ||||
| Document Type: Original Article | ||||
| DOI: 10.21608/icmep.2008.29898 | ||||
 View on SCiNiTO | ||||
| Authors | ||||
| Ashraf. F. EL-Sherif; Mahmoud F. Hassan; Ayman M. Mokhtar; Ahmed M. Samy | ||||
| Abstract | ||||
| Abstract A complete characterization for the diode laser module operating at 808 nm is required for different applications; such as developing an efficient Nd3+ doped solid state laser, industrial and medical applications. In this paper a complete characterization for a high power diode laser module with fiber pigtail is presented. Up to 6.6 Watt output optical power was measured. The electrical characterization of the diode laser module was examined by measuring the dependence of the laser driving current on the operating voltage. The optical characterization was investigated at different temperatures; these included the laser output power versus the driving current, the output optical power versus electrical input power and the laser output spectrum. The measured diode laser parameters at 25oC were (1.3A) threshold current, (42%) overall slope efficiency and (807.96nm) central wavelength with line width of (3.59nm) at FWHM. The variation of the above mentioned parameters with temperature are presented. | ||||
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