EXTINCTION-BASED VARIABLE OPTICAL ATTENUATOR IN InGaAsP/InP | ||||
The International Conference on Mathematics and Engineering Physics | ||||
Article 12, Volume 3, International Conference on Engineering Mathematics and Physics (ICMEP-3), May 2006, Page 1-10 PDF (595.6 K) | ||||
Document Type: Original Article | ||||
DOI: 10.21608/icmep.2006.29915 | ||||
View on SCiNiTO | ||||
Authors | ||||
ABDALLA S.1; NG S.2; MOKHTAR M. M.1; HASAN M. F.1 | ||||
1Egyptian Armed Forces. | ||||
2Department of Electronics, Carleton University, Canada. | ||||
Abstract | ||||
ABSTRACT An extinction-based compact InGaAsP/InP waveguide variable optical attenuator (VOA) with electrically modulated bend loss is demonstrated. Injection of carriers is utilized to modify the effective index of the waveguide bent section. The p-i-n semiconductor waveguide layer structure is discussed. Signal propagation at multiple bias conditions is simulated and the attenuator performance is calculated and compared to that of a straight waveguide attenuator. The device exhibits attenuation better than 15 dB for both TE and TM polarizations. 3-dB attenuation is achieved at an applied current of ~ 12 mA which is less than half the current required by a comparable straight waveguide attenuator. | ||||
Keywords | ||||
Bend loss attenuation; InGaAsP/InP; carrier injection; Variable optical attenuator | ||||
Statistics Article View: 131 PDF Download: 202 |
||||