Pressure Sensor Interface Circuit Based on Silicon Carbide Electronics for Harsh Environment Operation | ||||
The International Conference on Electrical Engineering | ||||
Article 66, Volume 9, 9th International Conference on Electrical Engineering ICEENG 2014, May 2014, Page 1-5 PDF (425.71 K) | ||||
Document Type: Original Article | ||||
DOI: 10.21608/iceeng.2014.30494 | ||||
View on SCiNiTO | ||||
Authors | ||||
Joseph Samy Albert Riad1; Mourad N. El-Gamal2; Hani Fikry Ragai1 | ||||
1ECE Department Faculty of Engineering, Ain Shams University Cairo, Egypt. | ||||
2ECE Department McGill University Montréal, Canada. | ||||
Abstract | ||||
Pressure sensing in harsh environments poses many difficulties. The major challenge is implementing a sensor interface circuit capable of operation at high temperatures ( 300°C) for extended periods of time. Conventional, siliconbased electronics are not suitable for operation in such conditions due to their sizable leakage currents and junction instability. In this work, a wireless solution based on silicon carbide electronics is presented. The proposed solution follows a simple design procedure and exhibits robustness to the large process variations typically associated with silicon carbide technology. | ||||
Keywords | ||||
silicon carbide; harsh environment; sensor interface | ||||
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