Low voltage low power programmable logic gate based on SE-MOSFET | ||||
| The International Conference on Electrical Engineering | ||||
| Article 35, Volume 8, 8th International Conference on Electrical Engineering ICEENG 2012, May 2012, Page 1-7 PDF (162.19 K) | ||||
| Document Type: Original Article | ||||
| DOI: 10.21608/iceeng.2012.30669 | ||||
 View on SCiNiTO | ||||
| Authors | ||||
| Soha Ahmed; Hesham F. A. Hamed; E. A. M. Hasaneen | ||||
| Electrical Engineering Depart., Faculty of Engineering Minia University, El-Minia, Egypt. | ||||
| Abstract | ||||
| Single electron transistor (SET) is one of the most promising devices for nanoscale circuit design. In this paper, new low voltage low power programmable logic gate circuits using SE-MOSFET are presented. Devices that combine singleelectron and metal–oxide–semiconductor (MOS) transistors allows compact realization of basic logic function that exhibit periodic transfer characteristics. The proposed SE-MOSFET logic gates are useful for implementing binary logic circuits. The proposed programmable logic gate is verified by simulating the circuit using PSPICE. The results show that the operation of proposed circuit is in accordance with the theories. | ||||
| Keywords | ||||
| SE-MOSFTT Hybrid Circuits; Low Power Circuits; Logic Gate | ||||
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