Temperature Effects on the Electrical Characteristics of BJTs and MOSFETs | ||||
| Journal of Scientific Research in Science | ||||
| Article 6, Volume 36, Issue 1, April 2019, Page 100-112 PDF (992.21 K) | ||||
| Document Type: Original Article | ||||
| DOI: 10.21608/jsrs.2019.30999 | ||||
 View on SCiNiTO | ||||
| Authors | ||||
Reiham. O. Ibrahim  1; S. M. Abd El-Azeem1; S. M. El-Ghanam1; F. A. S. Soliman2
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| 1Electronic Res. Lab., Physics Dept., Faculty of Women for Arts, Science and Education, Ain-Shams Univ., Cairo, Egypt. | ||||
| 2Nuclear Materials Authority, P. O. Box 530-Maadi-11728, Cairo, Egypt. | ||||
| Abstract | ||||
| The aim of the present paper is to shed further light on studying the temperature effects on the static (I-V) and dynamic (C-V) characteristics of bipolar junction- and metal oxide field effect - transistors. In this concern, several parameters were plotted at different temperature levels. The experimental results showed that, for the bipolar junction transistor 2SC2120, a noticeable increase in the collector current and the current gain from 0.198 A and 0.14 up-to 0.25 A and 0.24 by increasing the temperature from 25ºC and 135ºC, respectively. Considering the threshold voltage, its value was shown to be decreased from 0.62 Volt to 0.42 Volt within the same temperature range. In addition, from the traced dynamic characteristics of the same BJT, the diffusion capacitance of the emitter-base junction, as an example, increased from 10.11 nF up-to 45.09 nF by increasing the temperature up-to 135 ºC. On the other hand, for metal oxide field effect transistor 2N6660, the static characteristics showed that a noticeable decrease in the drain current and the forward trans-conductance from 1.2A and 5.0 Ω-1 down-to 0.79 A and 1.9 Ω-1, respectively, due to temperature increasing from 25 ºC up-to 135 ºC. While the threshold voltage was hold constant. Finally, the reverse capacitance of the gate-drain junction was shown to be increases from 41.48 pF up-to 47.31 pF within the same range of temperature. | ||||
| Keywords | ||||
| Temperature effect; bipolar junction transistor; metal oxide field effect transistor; capacitance; impedance; quality and dissipation factor and phase angle | ||||
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