Growth and characterization of Ag2Te single crystals | ||||
International Journal of Advanced Scientific Research and Innovation | ||||
Volume 6, Issue 2, December 2023, Page 70-79 PDF (765.33 K) | ||||
Document Type: Original Article | ||||
DOI: 10.21608/ijasri.2023.242649.1011 | ||||
View on SCiNiTO | ||||
Authors | ||||
Mohamed M Fangary 1; M . Nassary2 | ||||
1Physics Department, Faculty of science, Luxor University, Luxor, Egypt | ||||
2Physics Department, Faculty of science, south valley University | ||||
Abstract | ||||
A special design, based on the Bridgman technique, was used in our laboratory for preparing single crystals of Ag2Te. By the combination of electrical and thermoelectrical measurements, electronic transport parameters of Ag2Te single crystals have been studied. Through the transport experiment, the semiconducting properties of this compound could be revealed. The compound Ag2Te, which has p-type conductivity, is studied throughout a wide temperature range extending from 163- 520 k. | ||||
Keywords | ||||
Ag2Te single crystal; Hall coefficient; thermoelectric power | ||||
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