ANALYTICAL MODEL FOR FREQUENCY RESPONSE OF A GUNN DIODE IN TRANSIT TIME MODEAND APPLICATION FOR GALLIUM NITRIDE BASED DIODES
Islam, O., Hassan, G., Uddin, A., Islam, R., Mahmood, Z. (2010). ANALYTICAL MODEL FOR FREQUENCY RESPONSE OF A GUNN DIODE IN TRANSIT TIME MODEAND APPLICATION FOR GALLIUM NITRIDE BASED DIODES. EKB Journal Management System, 7(7th International Conference on Electrical Engineering ICEENG 2010), 1-7. doi: 10.21608/iceeng.2010.33285
Onirban Islam; Galib Hassan; Ahsan Uddin; Raisul Islam; Zahid H. Mahmood. "ANALYTICAL MODEL FOR FREQUENCY RESPONSE OF A GUNN DIODE IN TRANSIT TIME MODEAND APPLICATION FOR GALLIUM NITRIDE BASED DIODES". EKB Journal Management System, 7, 7th International Conference on Electrical Engineering ICEENG 2010, 2010, 1-7. doi: 10.21608/iceeng.2010.33285
Islam, O., Hassan, G., Uddin, A., Islam, R., Mahmood, Z. (2010). 'ANALYTICAL MODEL FOR FREQUENCY RESPONSE OF A GUNN DIODE IN TRANSIT TIME MODEAND APPLICATION FOR GALLIUM NITRIDE BASED DIODES', EKB Journal Management System, 7(7th International Conference on Electrical Engineering ICEENG 2010), pp. 1-7. doi: 10.21608/iceeng.2010.33285
Islam, O., Hassan, G., Uddin, A., Islam, R., Mahmood, Z. ANALYTICAL MODEL FOR FREQUENCY RESPONSE OF A GUNN DIODE IN TRANSIT TIME MODEAND APPLICATION FOR GALLIUM NITRIDE BASED DIODES. EKB Journal Management System, 2010; 7(7th International Conference on Electrical Engineering ICEENG 2010): 1-7. doi: 10.21608/iceeng.2010.33285

ANALYTICAL MODEL FOR FREQUENCY RESPONSE OF A GUNN DIODE IN TRANSIT TIME MODEAND APPLICATION FOR GALLIUM NITRIDE BASED DIODES

The International Conference on Electrical Engineering
Article 114, Volume 7, 7th International Conference on Electrical Engineering ICEENG 2010, May 2010, Page 1-7  XML PDF (294.4 K)
Document Type: Original Article
DOI: 10.21608/iceeng.2010.33285
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Authors
Onirban Islam1; Galib Hassan2; Ahsan Uddin3; Raisul Islam1; Zahid H. Mahmood4
1Md., Undergraduate student, Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, Dhaka-1000, Bangladesh.
2Md., Undergraduate student, Department of Mathematics, University of Dhaka, Dhaka-1000, Bangladesh.
3Md., Graduate student, Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, Dhaka-1000, Bangladesh.
4Associate Professor, Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, Dhaka-1000, Bangladesh.
Abstract
Abstract:
Gunn oscillation can occur via the transferred electron effect or the negative differential
mass effect. We have mathematically formulated the frequency response of a Gunn
diode operating in the transit time mode independent of the mechanism responsible for
Gunn oscillation in bulk semiconductors. Domain growth dynamics with space and
time, variation of domain velocity, and frequency response have been simulated for
Gallium Nitride (GaN) by using our mathematical equations. Our simulation shows that
gallium nitride based Gunn diodes at an active length of 5 micrometer can produce
frequency around 40 GHz for DC biasing 150 V.
Keywords
Domain growth dynamics; domain velocity; frequency response; GaN-Gunn diode
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