ANALYTICAL MODEL FOR FREQUENCY RESPONSE OF A GUNN DIODE IN TRANSIT TIME MODEAND APPLICATION FOR GALLIUM NITRIDE BASED DIODES | ||||
The International Conference on Electrical Engineering | ||||
Article 114, Volume 7, 7th International Conference on Electrical Engineering ICEENG 2010, May 2010, Page 1-7 PDF (294.4 K) | ||||
Document Type: Original Article | ||||
DOI: 10.21608/iceeng.2010.33285 | ||||
View on SCiNiTO | ||||
Authors | ||||
Onirban Islam1; Galib Hassan2; Ahsan Uddin3; Raisul Islam1; Zahid H. Mahmood4 | ||||
1Md., Undergraduate student, Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, Dhaka-1000, Bangladesh. | ||||
2Md., Undergraduate student, Department of Mathematics, University of Dhaka, Dhaka-1000, Bangladesh. | ||||
3Md., Graduate student, Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, Dhaka-1000, Bangladesh. | ||||
4Associate Professor, Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, Dhaka-1000, Bangladesh. | ||||
Abstract | ||||
Abstract: Gunn oscillation can occur via the transferred electron effect or the negative differential mass effect. We have mathematically formulated the frequency response of a Gunn diode operating in the transit time mode independent of the mechanism responsible for Gunn oscillation in bulk semiconductors. Domain growth dynamics with space and time, variation of domain velocity, and frequency response have been simulated for Gallium Nitride (GaN) by using our mathematical equations. Our simulation shows that gallium nitride based Gunn diodes at an active length of 5 micrometer can produce frequency around 40 GHz for DC biasing 150 V. | ||||
Keywords | ||||
Domain growth dynamics; domain velocity; frequency response; GaN-Gunn diode | ||||
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