Design of High Efficient Power Amplifier with Wide-Band Input Matching Technique for UWB Wireless Applications | ||||
| Journal of Advanced Engineering Trends | ||||
| Volume 43, Issue 1, January 2024, Page 17-26 PDF (836.45 K) | ||||
| Document Type: Original Article | ||||
| DOI: 10.21608/jaet.2022.146462.1212 | ||||
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| Authors | ||||
mayar ali mohamed  1; Hesham F. A. Hamed2; Ghazal A. Fahmy3
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| 1Electrical Engineering Department, Higher Institute of Engineering and Technology, New Minia | ||||
| 2Faculty of Engineering, Minia University, Minia 61519, Egypt; Faculty of Engineering, Egyptian–Russian University, Cairo 11829, Egypt | ||||
| 3National Telecommunications Institute (NTI), Cairo 11768, Egypt | ||||
| Abstract | ||||
| The research offers the design of a highly efficient (3.1 -10.6) GHz ultra wide band (UWB) power amplifier (PA) with an improvement in the input matching, using the process of CMOS TSMC 0.065 µm. A wide input matching topology and a resistor-capacitor (RC) interstage are adopted for input matching and flatten gain improvements, respectively. The feedback circuit leading the gate inductor combined with the peaking inductive divider accomplishes a low input return loss and extends the band of operation. The post-layout simulations indicate a high flattened average power gain (S21) of 22.2 ± 1.5 dB while the improved matching topology attains a good input (S11) and output (S22) return loss below -11 dB. Moreover, a small group delay (GD) variation of ± 47.5 ps is achieved for the UWB frequencies. In addition, a great power-added efficiency (PAE) of 33% and an output power (P_out) of 11 dBm are achieved. The complete UWB PA design consumes only 19 mW from 1.2 supply voltage. | ||||
| Keywords | ||||
| Keywords: Wireless Communication; Ultra-Wideband Applications; Wideband Matching; Power Amplifier | ||||
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