Improved Model of a Gallium Nitride HEMT for High Power Application | ||||
| Journal of Advanced Engineering Trends | ||||
| Volume 43, Issue 1, January 2024, Page 27-32 PDF (783.44 K) | ||||
| Document Type: Original Article | ||||
| DOI: 10.21608/jaet.2022.144591.1194 | ||||
 View on SCiNiTO | ||||
| Authors | ||||
Gamal Mahmoud Dousoky   1; fatma mohamed Ali2; Mahmoud ahmed abdelghany3; mohamed Abouelatta4; Masahito Shoyama5
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| 1Electrical Engineering Department, Faculty of Engineering, Minia University, Minia 61517, Egypt | ||||
| 2Department of Electrical Engineering, Faculty of Engineering, Minia University, Minia , Egypt. | ||||
| 3Department of Electronics & Communications Engineering, Faculty of Engineering, Minia University, Minia, Egypt. Electrical Engineering Department, College of Engineering, Prince Sattam Bin Abdulaziz University, Wadi Addwasir 11991, | ||||
| 4Department of Electronics and Communications Engineering, Faculty of Engineering, Ain Shams University, Egypt | ||||
| 53Department of Electrical Engineering, Faculty of Information Science and Electrical Engineering, Kyushu University, Japan | ||||
| Abstract | ||||
| In this paper, a development of Gallium Nitride -High-Electron-Mobility Transistor (HEMT) model is presented. Static characteristics are extracted from a commercial device data sheet and fitted into empirical functions using MATLAB software package. The stability performance of GaN devices is important to work in most of applications. The equivalent circuit model is tested in a simple configuration for plotting I-V curve through estimating parameters of the gate to drain capacitance (CGD) and drain to source capacitance (CDS). These parasitic capacitances are essential to provide a comprehensive understanding of the switching behavior of the device as well as critical parameters to enhance model static current-voltage characteristics .A stable performance of I-V curve has been achieved when using the proposed improved model equations of those capacitances. The obtained results show that the proposed model of Gallium Nitride -HEMT is favorable for use in high frequency, high efficiency, and high power density power conversion applications. | ||||
| Keywords | ||||
| GaN; modeling; Capacitance | ||||
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