A novel thin-film power MOSFET with an asymmetrical buried oxide double step structure | ||||
| The International Conference on Electrical Engineering | ||||
| Article 73, Volume 6, 6th International Conference on Electrical Engineering ICEENG 2008, May 2008, Page 1-7 PDF (157.57 K) | ||||
| Document Type: Original Article | ||||
| DOI: 10.21608/iceeng.2008.34313 | ||||
 View on SCiNiTO | ||||
| Authors | ||||
| Ali A. Orouji1; Samaneh Sharbati1; Morteza Fathipour2 | ||||
| 1Electrical Engineering Department, Semnan University, Semnan, IRAN. | ||||
| 2Electrical Engineering Department, Tehran University, Tehran, IRAN. | ||||
| Abstract | ||||
| Abstract: In this paper, we have proposed a novel Silicon-On-Insulator (SOI) power MOSFET structure .This structure is a combination of two sub structures: a buried oxide step (BOS) and a buried oxide double step (BODS) that named asymmetrical buried oxide double step (ABODS). Using two-dimensional simulation, we have investigated the improvement in device performance focusing on the breakdown voltage. The ABODS structure exhibits a high breakdown voltage respected to other SOI structures at a much higher impurity concentration that can causes lower on-resistance (RON). | ||||
| Keywords | ||||
| Silicon-on-insulator (SOI); Power MOSFET; Breakdown Voltage; Buried Oxide Double Step Structure | ||||
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