Compact model for undoped symmetric double gate comprising quantization effect
Abo-Elhadeed, A., Abdolkader, T., Fikry, W., Ragaie, H. (2008). Compact model for undoped symmetric double gate comprising quantization effect. EKB Journal Management System, 6(6th International Conference on Electrical Engineering ICEENG 2008), 1-10. doi: 10.21608/iceeng.2008.34314
Ahmed Abo-Elhadeed; Tarek Abdolkader; Wael Fikry; Hani Ragaie. "Compact model for undoped symmetric double gate comprising quantization effect". EKB Journal Management System, 6, 6th International Conference on Electrical Engineering ICEENG 2008, 2008, 1-10. doi: 10.21608/iceeng.2008.34314
Abo-Elhadeed, A., Abdolkader, T., Fikry, W., Ragaie, H. (2008). 'Compact model for undoped symmetric double gate comprising quantization effect', EKB Journal Management System, 6(6th International Conference on Electrical Engineering ICEENG 2008), pp. 1-10. doi: 10.21608/iceeng.2008.34314
Abo-Elhadeed, A., Abdolkader, T., Fikry, W., Ragaie, H. Compact model for undoped symmetric double gate comprising quantization effect. EKB Journal Management System, 2008; 6(6th International Conference on Electrical Engineering ICEENG 2008): 1-10. doi: 10.21608/iceeng.2008.34314

Compact model for undoped symmetric double gate comprising quantization effect

The International Conference on Electrical Engineering
Article 74, Volume 6, 6th International Conference on Electrical Engineering ICEENG 2008, May 2008, Page 1-10  XML PDF (102.59 K)
Document Type: Original Article
DOI: 10.21608/iceeng.2008.34314
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Authors
Ahmed Abo-Elhadeed1; Tarek Abdolkader2; Wael Fikry3; Hani Ragaie4
1Mentor Graphics.
2Higher Institute of Technology, Benha University.
3Ain Shams University.
4French University in Egypt.
Abstract
Abstract:
In this paper we propose an analytical modification for Hu’s model which is an
analytical model for undoped symmetric double gate MOSFETs. This modification
targets to include the energy states quantization effect on the drain current. This leads to
correct the model behavior for ultra thin double gate. Moreover, we introduce a simple
method to include the velocity saturation effect in the current equation. Comparison
with device simulator results is finally presented to validate the proposed modifications.
Keywords
double gate MOSFETS; compact models; quantization effect; velocity saturation
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