MICROSTRUCTURAL MODELING OF INTRINSIC STRESSES IN MULTI-JUNCTION BASED PHOTOVOLTAIC
Hatem, T., Elewa, M., Salah, A. (2014). MICROSTRUCTURAL MODELING OF INTRINSIC STRESSES IN MULTI-JUNCTION BASED PHOTOVOLTAIC. EKB Journal Management System, 16(16th International Conference on Applied Mechanics and Mechanical Engineering.), 1-7. doi: 10.21608/amme.2014.35581
T. M. Hatem; M. T. Elewa; A. B. Salah. "MICROSTRUCTURAL MODELING OF INTRINSIC STRESSES IN MULTI-JUNCTION BASED PHOTOVOLTAIC". EKB Journal Management System, 16, 16th International Conference on Applied Mechanics and Mechanical Engineering., 2014, 1-7. doi: 10.21608/amme.2014.35581
Hatem, T., Elewa, M., Salah, A. (2014). 'MICROSTRUCTURAL MODELING OF INTRINSIC STRESSES IN MULTI-JUNCTION BASED PHOTOVOLTAIC', EKB Journal Management System, 16(16th International Conference on Applied Mechanics and Mechanical Engineering.), pp. 1-7. doi: 10.21608/amme.2014.35581
Hatem, T., Elewa, M., Salah, A. MICROSTRUCTURAL MODELING OF INTRINSIC STRESSES IN MULTI-JUNCTION BASED PHOTOVOLTAIC. EKB Journal Management System, 2014; 16(16th International Conference on Applied Mechanics and Mechanical Engineering.): 1-7. doi: 10.21608/amme.2014.35581

MICROSTRUCTURAL MODELING OF INTRINSIC STRESSES IN MULTI-JUNCTION BASED PHOTOVOLTAIC

The International Conference on Applied Mechanics and Mechanical Engineering
Article 38, Volume 16, 16th International Conference on Applied Mechanics and Mechanical Engineering., May 2014, Page 1-7  XML PDF (1.1 MB)
Document Type: Original Article
DOI: 10.21608/amme.2014.35581
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Authors
T. M. Hatem1; M. T. Elewa2; A. B. Salah3
1Assistant Professor, Dept. of Mech. Engineering, British University in Egypt, El Sherouk City, Cairo, Egypt.
2Research Assistant, Dept. of Mech. Engineering, British University in Egypt, El Sherouk City, Cairo, Egypt.
3Professor, Dept. of Electrical Engineering, North Carolina State University, Raleigh, USA.
Abstract
ABSTRACT
Genuine Processing techniques have been developed to minimize density of
dislocations and other defects originating from thermal stresses present in Multi
Junction Photo Voltaic devices (MJ-PVs). Embedded Void Approach; (EVA) was
used to address the defects evolution in GaAs growth on Si substrates. In attempts
to study void effect on dislocation generation; elastic models were prepared for
voided and un-voided structures. Stresses and displacements were compared and
related to alteration in dislocation density. The models indicated that void presence
could significantly diminish defects density leading to less cracks and failures in MJPVs,
thus enabling manufacturers to utilize their wide spectrum of photon absorption.
Keywords
Dislocation Density; Multi-junction solar cells; Finite Element Modeling; thermal stress; Embedded Void Approach; Elastic Study
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