MICROSTRUCTURAL MODELING OF INTRINSIC STRESSES IN MULTI-JUNCTION BASED PHOTOVOLTAIC | ||||
The International Conference on Applied Mechanics and Mechanical Engineering | ||||
Article 38, Volume 16, 16th International Conference on Applied Mechanics and Mechanical Engineering., May 2014, Page 1-7 PDF (1.1 MB) | ||||
Document Type: Original Article | ||||
DOI: 10.21608/amme.2014.35581 | ||||
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Authors | ||||
T. M. Hatem1; M. T. Elewa2; A. B. Salah3 | ||||
1Assistant Professor, Dept. of Mech. Engineering, British University in Egypt, El Sherouk City, Cairo, Egypt. | ||||
2Research Assistant, Dept. of Mech. Engineering, British University in Egypt, El Sherouk City, Cairo, Egypt. | ||||
3Professor, Dept. of Electrical Engineering, North Carolina State University, Raleigh, USA. | ||||
Abstract | ||||
ABSTRACT Genuine Processing techniques have been developed to minimize density of dislocations and other defects originating from thermal stresses present in Multi Junction Photo Voltaic devices (MJ-PVs). Embedded Void Approach; (EVA) was used to address the defects evolution in GaAs growth on Si substrates. In attempts to study void effect on dislocation generation; elastic models were prepared for voided and un-voided structures. Stresses and displacements were compared and related to alteration in dislocation density. The models indicated that void presence could significantly diminish defects density leading to less cracks and failures in MJPVs, thus enabling manufacturers to utilize their wide spectrum of photon absorption. | ||||
Keywords | ||||
Dislocation Density; Multi-junction solar cells; Finite Element Modeling; thermal stress; Embedded Void Approach; Elastic Study | ||||
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