MORPHOLOGICAL CONTROL OF SINGLE CRYSTALLINE SILICON NANOWIRES AT NEAR-ROOM TEMERATURES | ||||
The International Conference on Applied Mechanics and Mechanical Engineering | ||||
Article 8, Volume 13, 13th International Conference on Applied Mechanics and Mechanical Engineering., May 2008, Page 26-36 PDF (587.39 K) | ||||
Document Type: Original Article | ||||
DOI: 10.21608/amme.2008.38962 | ||||
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Authors | ||||
CHEN C-Y1; WU C-S1; CHOU C-J2; YEN T-J1 | ||||
1Department of Materials Science and Engineering, National Tsing Hua University Hsinchu, 300, Taiwan (R. O. C.). | ||||
2Department of Industrial Engineering and Engineering Management, National Tsing Hua University, Hsinchu, 300, Taiwan (R. O. C.). | ||||
Abstract | ||||
ABSTRACT By using a statistic electroless metal deposition (SEMD) method, here we report the morphological controllability of single crystalline silicon nanowires (SiNWs) with respect to their orientations, diameters, and lengths. The growth axis of single crystalline SiNWs on three oriented Si wafers- (100), (110) and (111)- is the [100] direction. Furthermore, the consistent results examined based on the arrays of SiNWs evidently indicate that the [100] direction is the preferential axial orientation of fabricated SiNWs in all cases. Notice that our observation is different from the previous reports, and such a corresponding formation mechanism of anisotropic SiNWs can be successfully elucidated by both lattice configuration of oriented Si surfaces and the passivation effect on the H-terminated planes. Next, the diameter control of SiNWs is achieved by employing the Taguchi methods, proving the capability of controlling the diameter with narrow distribution and comprehension of the influences from all process factors. The length of SiNWs presents fast and linear dependence with the immersion time. In addition to the morphological control of SiNWs, our statistic EMD technique provides further advantages such as almost room-temperature operation and catalyst/dopant free, paving a way towards the implementation of SiNWs in nanoelectronics, nanoscale optoelectronics, nano-electro-mechanical systems, and biological detection. | ||||
Keywords | ||||
SEMD; SiNWs | ||||
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