RELIABILITY OF MICROELECTRONIC DEVICES FROM EMITTERBASE JUNCTION CHARACTERIZATION | ||||
| The International Conference on Applied Mechanics and Mechanical Engineering | ||||
| Article 141, Volume 13, 13th International Conference on Applied Mechanics and Mechanical Engineering., May 2008, Page 29-37 PDF (289.52 K) | ||||
| Document Type: Original Article | ||||
| DOI: 10.21608/amme.2008.39820 | ||||
 View on SCiNiTO | ||||
| Authors | ||||
| TAZBIT W.; MIALHE P. | ||||
| Laboratoire de physique appliquée et d’automatique LP2A, Université de Perpignan, 52 Avenue Paul Alduy ,66860 Perpignan Cedex, France. | ||||
| Abstract | ||||
| ABSTRACT The current-voltage characteristics of microelectronic devices are used to compare commercial components. A double exponential model (VDEM) introduces physical parameters to characterise the junction properties of bipolar transistor. The method leads to differentiate the high and low power operating modes of devices and shows that values of the junction parameters can be associated with each manufacture and related to quality and reliability control. | ||||
| Keywords | ||||
| Quality; Reliability; characterisation; microelectronic | ||||
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